Microwave free carrier absorption use to investigate photo-induced carrier annihilation
Research members： Toshiyuki Sameshima PhD., Masahiko Hasumi PhD.
Research fields： Electrical and electronic engineering
Departments： Institute of Engineering
Keywords： laser, RTA, TFT, solar cell, low thermal budget, precise measurement of carrier concentration
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Summary
Developed a measurement system in highlyprecise photo-induced minority carrier density and minority carrier effectivelifetime that used the characteristic of the photo-induced carrier whichoccurred microwave absorption on irradiated a semiconductor substrate withconsecutive light.
It allowed the density of the photo induced carrier recombination defect andcalculation of the distribution by the measurement and a numerical analysisprogram using the multi-wave-length photo. Furthermore, we developed themeasurement technology for effective lifetime change and recombination defectdensity change by the electric field.
Reference articles and patents
1)T. Sameshima, T. Motoki, K. Yasuda, T. Nakamura, M. Hasumi, and T. Mizuno: "Photoinduced carrier annihilation in silicon pn junction", to be published in Jpn. J. Appl. Phys. (2015)
2)T. Sameshima and S. Shibata: "Annihilation of photo induced minority carrier caused by ion implantation and rapid thermal annealing", Jpn. J. Appl. Phys. 53 (2014) 061301-1-6.
3)T. Sameshima, J. Furukawa, T. Nakamura, S. Shigeno, T. Node, S. Yoshudomi, and M. Hasumi: "Photo induced minority carrier annihilation at crystalline silicon surface in metal oxide semiconductor structure", Jpn. J. Appl. Phys. 53 (2014) 031301-1-6.
4)T. Sameshima, J. Furukawa, and S. Yoshidomi: "Minority Carrier Annihilation in Lateral Direction Caused by Recombination Defects at Cut Edges and Bear Surfaces of Crystalline Silicon", Jpn. J. Appl. Phys. 52 (2013) 041303-1-6.
5)T. Sameshima, R. Ebina, K. Bestuin, Y. Takiguchi, and M. Hasumi: "Investigation of Silicon Surface Passivation by Microwave Annealing Using Multiple-Wavelength Light-Induced Carrier Lifetime Measurement", Jpn. J. Appl. Phys 52 (2013) 011801-1-6.
6)T. Sameshima, K. Betsuin, T. Mizuno and N. Sano: "Minority Carrier Lifetime Behavior in Crystalline Silicon in Rapid Laser Heating", Jpn. J. Appl. Phys. 51 (2012)03CA04-1-6.
7)T. Sameshima, T. Nagao, M. Hasumi, A.Shuku, E.Takahashi and Y. Andoh: "Surface Passivation of Crystalline Silicon by Combination of Amorphous Silicon Deposition with High-Pressure H2O Vapor Heat Treatment", Jpn. J. Appl. Phys 51 (2012) 03CA06-1-6.
8)T. Sameshima, T. Nagao, S. Yoshidomi, K. Kogure and M. Hasumi, "Minority Carrier Lifetime Measurements by Photo-Induced Carrier Microwave Absorption Method", Jpn. J.Appl. Phys. 50 (2011) 03CA02-1-8.
9)T. Sameshima, H. Hayasaka, and T. Haba, "Analysis of Microwave Absorption Caused by Free Carriers in Silicon", Jpn. J.Appl. Phys. 48 (2009) 021204-1-6.